Name: ZXMN10A08DN8TA
Brand: Diodes Incorporated
SKU: ZXMN10A08DN8TA
Price: 0.91000 USD
Availability: InStock

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ZXMN10A08DN8TA

Manufacturer part number:ZXMN10A08DN8TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R

Case Package:SOT-23

Datasheet:ZXMN10A08DN8TA Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	250mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Max Power Dissipation	1.8W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2.1A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	3.4 ns
Power - Max	1.25W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.6A
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 10V
Rise Time	2.2ns
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	2.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	9A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About ZXMN10A08DN8TA

The ZXMN10A08DN8TA from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ZXMN10A08DN8TA, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.