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ZXMN2A04DN8TA

ZXMN2A04DN8TA

ZXMN2A04DN8TA

Diodes Incorporated

Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R

SOT-23

ZXMN2A04DN8TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 20V
Max Power Dissipation2.1W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating6A
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
Number of Elements 2
Number of Channels 2
Operating ModeENHANCEMENT MODE
Power Dissipation2.1W
Turn On Delay Time7.9 ns
Power - Max 1.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.9A
Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V
Rise Time14.8ns
Fall Time (Typ) 30.6 ns
Turn-Off Delay Time 50.5 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.9A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3761 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.068218$0.068218
500$0.050161$25.0805
1000$0.041800$41.8
2000$0.038349$76.698
5000$0.035840$179.2
10000$0.033340$333.4
15000$0.032243$483.645
50000$0.031704$1585.2

About ZXMN2A04DN8TA

The ZXMN2A04DN8TA from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ZXMN2A04DN8TA, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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