STGW60H65DFB-4 Description
This STGW60H65DFB-4 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGW60H65DFB-4 is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates the power path from the driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGW60H65DFB-4 Features
Maximum junction temperature: Tj= 175 °C
Excellent switching performance thanks to the extra driving kelvin pin
Low VcE(sat)= 1.6V (typ.)@Ic=60A
Minimized tail current
Tight parameter distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGW60H65DFB-4 Applications
Photovoltaic inverters
High-frequency converters
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
