STGWA25H120F2 Description
These devices are IGBTs developed using anadvanced proprietary trench gate field-stopstructure. These devices are part of the H seriesof IGBTs, which represent an optimumcompromise between conduction and switchinglosses to maximize the efficiency of highswitching frequency converters. Moreover, aslightly positive VCE(sat) temperature coefficientand very tight parameter distribution result insafer paralleling operation.
STGWA25H120F2 Features
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? VCE(sat) = 2.1 V (typ.) @ IC = 25 A
? 5 μs minimum short circuit withstand time at
TJ=150 °C
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
STGWA25H120F2 Applications
? Uninterruptible power supply
? Welding machines
? Photovoltaic inverters
? Power factor correction
? High frequency converters
