STGB20H60DF Description
This STGB20H60DF is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT STGB20H60DF offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high-frequency converters. Furthermore, a positive VcE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.
STGB20H60DF Features
High-speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
STGB20H60DF Applications
Motor control
UPS
PFC
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
