STGWT40H65FB Description
The STGWT40H65FB IGBT was developed using an advanced proprietary trench gate field-stop structure. The transistor STGWT40H65FB is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT40H65FB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Very low saturation voltage: VCE(sat) = 1.6 V (Typ) @ IC = 40 A
Safe paralleling
Tight parameter distribution
Low thermal resistance
STGWT40H65FB Applications
Welding
Power factor correction
UPS
Solar inverters
Chargers
