STGW40H65DFB Description
The STGW40H65DFB is an IGBT that was created with a patented trench gate field stop construction. The STGW40H65DFB is part of the new HB series of IGBTs, which offers the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.
STGW40H65DFB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGW40H65DFB Applications
