FGD3N60UNDF Description
Using advanced NPT IGBT technology, the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential. An IGBT is a device suitable for high-current control combining a voltage-driven MOSFET in the front stage and a transistor allowing a large current to flow in the rear stage. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching.
FGD3N60UNDF Features
Short Circuit Rated 10us
High Current Capability
High Input Impedance
Fast Switching
RoHS Compliant
Lead Free
FGD3N60UNDF Applications
Sewing Machine
CNC
Home Appliances
Motor Control
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
