IKW75N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKW75N60TFKSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2006
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH SWITCHING SPEED
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
428W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
121ns
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
80A
Turn On Time
69 ns
Test Condition
400V, 75A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
Turn Off Time-Nom (toff)
401 ns
IGBT Type
Trench Field Stop
Gate Charge
470nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
33ns/330ns
Switching Energy
4.5mJ
RoHS Status
ROHS3 Compliant
In-Stock:701 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.36000
$9.36
10
$8.51900
$85.19
240
$7.16738
$1720.1712
720
$6.32672
$4555.2384
IKW75N60TFKSA1 Product Details
IKW75N60TFKSA1 Description
IKW75N60TFKSA1 is a single N-channel IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IKW75N60TFKSA1 is -40°C~175°C TJ and its maximum power dissipation is 428W. IKW75N60TFKSA1 has 3 pins and it is available in Tube packaging way. The Reverse Recovery Time of IKW75N60TFKSA1 is 121ns.
IKW75N60TFKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
IKW75N60TFKSA1 Applications
Frequency Converters
Uninterrupted Power Supply
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