IKY75N120CS6XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IKY75N120CS6XKSA1 Features
1200VTRENCHSTOPIGBT6 technology offering:
·High efficiency in hard switching and resonant topologies·Easy paralleling capability due to positive temperature coefficient in VcEsat·Low EMI
·Low Gate Charge Qg
.Very soft.fast recovery full current anti-parallel diode Maximumjunction temperature 175°C·Pb-free lead plating: RoHS compliant
Complete product spectrum and PSpice
IKY75N120CS6XKSA1 Applications
·Industrial UPS·Charger
·Energy storage
·Three-level Solar String Inverter
·Welding
