STGD20N45LZAG Description
The most sophisticated PowerMESHTM technology is used in this application-specific IGBT, which is tailored for coil driving in the demanding environment of automobile ignition systems. Over a wide operating temperature range, the STGD20N45LZAG has a very low on-state voltage and a very high SCIS energy capability. Furthermore, the ESD-protected logic level gate input and integrated gate resistor eliminate the need for external protective circuitry.
STGD20N45LZAG Features
AEC-Q101 qualified
SCIS energy of 300 MJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
The very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
STGD20N45LZAG Applications
