STGW20IH125DF Description
These IGBTs are developed using an advancedproprietary trench gate field-stop structure andperformance is optimized in both conduction andswitching losses. A freewheeling diode with a lowdrop forward voltage is co-packaged. The result isa product specifically designed to maximize
efficiency for any resonant and soft-switchingapplication.
STGW20IH125DF Features
? Designed for soft commutation only
? Maximum junction temperature: TJ = 175 °C
? Minimized tail current
? VCE(sat) = 2.0 V (typ.) @ IC = 15 A
? Tight parameters distribution
? Safe paralleling
? Very low VF soft recovery co-packaged diode
? Low thermal resistance
? Lead free package
STGW20IH125DF Applications
? Induction heating
? Microwave oven
? Resonant converters
