STGWA75M65DF2 Description
STGWA75M65DF2 is a 650v Trench gate field-stop IGBT. The STGWA75M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWA75M65DF2 is a part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VcE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGWA75M65DF2 Features
6 μs of short-circuit withstand time
VcE(sat)= 1.65 V (typ.) @ |c= 75 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGWA75M65DF2 Applications
Motor control
UPS
PFC
Automotive
Body electronics & lighting
Industrial
Power delivery
