NGTB30N65IHL2WG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.
NGTB30N65IHL2WG Features
? Extremely Efficient Trench with Fieldstop Technology
? Low Switching Loss Reduces System Power Dissipation
? Optimized for Low Losses in IH Cooker Application
? TJmax = 175°C
? Soft, Fast Free Wheeling Diode
? This is a Pb?Free Device
NGTB30N65IHL2WG Applications
? Inductive Heating
? Soft Switching
