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IHW30N135R5XKSA1

  • IHW30N135R5XKSA1 - IHW30N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IHW30N135R5XKSA1 - IHW30N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IHW30N135R5XKSA1

IHW30N135R5XKSA1

Infineon Technologies

IHW30N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N135R5XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-40°C~175°C TJ
Series TrenchStop™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 330W
Voltage - Collector Emitter Breakdown (Max) 1350V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge235nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/310ns
Switching Energy 1.4mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:1962 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$3.12058$748.9392

IHW30N135R5XKSA1 Product Details

IHW30N135R5XKSA1 Description


IGBT reverse conducting with a monolithic body



IHW30N135R5XKSA1 Features


  • extremely narrow parameter distribution

  • high tensile strength and temperature-stable characteristics

  • VcEsat -lOW

  • Easy parallel switching is possible thanks to Vcemi's positive temperature coefficient

  • Small EMI

  • JESD-022 qualified for the intended uses

  • Pb-free lead plating; complies with RoHS



IHW30N135R5XKSA1 Applications


?Cooking using induction


? Microwaves


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