STGW60H65DRF Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
STGW60H65DRF Features
Very high speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
6 μs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
STGW60H65DRF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
High switching frequency converters
