IKP30N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKP30N65H5XKSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Series
TrenchStop™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
188W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
188W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
55A
Reverse Recovery Time
51 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
650V
Turn On Time
28 ns
Test Condition
400V, 15A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Turn Off Time-Nom (toff)
224 ns
IGBT Type
Trench
Gate Charge
70nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
19ns/177ns
Switching Energy
280μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2106 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.29000
$3.29
10
$2.95700
$29.57
100
$2.42260
$242.26
500
$2.06232
$1031.16
IKP30N65H5XKSA1 Product Details
IKP30N65H5XKSA1 Description
The IKP30N65H5XKSA1 is a High speed 5 IGBT in TRENCHSTOP? 5 technology copacked with RAPID 1 fast and soft antiparallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKP30N65H5XKSA1 Features
IGBT copacked with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
IKP30N65H5XKSA1 Applications
Solar converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters
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