STGWA50M65DF2 Description
The STGWA50M65DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The STGWA50M65DF2 is an IGBT from the M series, which offers the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.
STGWA50M65DF2 Features
Safer paralleling
Low thermal resistance
Tight parameters distribution
VCE(sat) = 1.65 V (typ.) @ IC = 50 A
Soft and very fast recovery antiparallel diode
6 μs of minimum short-circuit withstand time
STGWA50M65DF2 Applications
Industrial
Enterprise systems
Communications equipment
