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STGP35HF60W

STGP35HF60W

STGP35HF60W

STMicroelectronics

STGP35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP35HF60W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation200W
Base Part Number STGP35
Element ConfigurationSingle
Power Dissipation200W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.65V
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Gate Charge140nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/175ns
Switching Energy 290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2255 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.12000$3.12
50$2.68020$134.01
100$2.34940$234.94
500$2.02966$1014.83

STGP35HF60W Product Details

STGP35HF60W Description


This Ultrafast IGBT is developed using a newplanar technology to yield a device with tighterswitching energy variation (Eoff) versustemperature. The suffix "W" denotes a subset ofproducts designed for high switching frequencyoperation (over 100 kHz).


STGP35HF60W Features

■ Improved Eoff at elevated temperature

■ Minimal tail current

■ Low conduction losses


STGP35HF60W Applications

■ Welding

■ High frequency converters

■ Power factor correction



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