IKW50N65WR5XKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IKW50N65WR5XKSA1 Features
? VCE = 650 V
? IC = 50 A
? Powerful monolithic diode optimized for ZCS applications
? High ruggedness, temperature stable behavior
? Very low VCEsat and low Eoff
? Easy paralleling capability due to positive temperature coefficient in VCEsat
? Low EMI
? Low electrical parameters depending (dependence) on temperature
? Qualified according to JESD-022 for target applications
? Pb-free lead plating; RoHS compliant
? Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
IKW50N65WR5XKSA1 Applications
? Welding
? PFC
? ZCS - converters
