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STGF10NB60SD

STGF10NB60SD

STGF10NB60SD

STMicroelectronics

STGF10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF10NB60SD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation25W
Current Rating10A
Base Part Number STGF10
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation25W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time460ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 23A
Reverse Recovery Time 37ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.8V
Max Breakdown Voltage 600V
Turn On Time1160 ns
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Turn Off Time-Nom (toff) 3100 ns
Gate Charge33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 20mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3815 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.161200$6.1612
10$5.812453$58.12453
100$5.483446$548.3446
500$5.173062$2586.531
1000$4.880247$4880.247

STGF10NB60SD Product Details

Description


The STGF10NB60SD is a 16 A, 600 V, low drop IGBT with a soft and fast recovery diode. This IGBT makes use of the cutting-edge Power MESH? technology, which has an incredibly low on-state voltage drop under low-frequency operating circumstances (up to 1 kHz).



Features


  • High current capability

  • Very soft ultra fast recovery antiparallel diode

  • Low on-voltage drop (VCE(sat))

  • High-current

  • Low-saturation-voltage capability



Applications


  • Light dimmer

  • Static relays

  • Motor drive

  • Switched-mode power supplies

  • Traction motor control

  • Induction heating


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