STGW40H65DFB-4 Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the new HB series of IGBTs, which represents anoptimum compromise between conduction and switching loss to maximize theefficiency of any frequency converter. A faster switching event can be achieved bythe Kelvin pin, which separates power path from driving signal. Furthermore, theslightly positive VCE(sat) temperature coefficient and very tight parameter distributionresult in safer paralleling operation.
STGW40H65DFB-4 Features
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
? Tight parameter distribution
? Safe paralleling
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Very fast soft recovery antiparallel diode
? Excellent switching performance thanks to the extra driving kelvin pin
STGW40H65DFB-4 Applications
? Photovoltaic inverters
? High frequency converters
