STGP12NB60HD Description
The STGP12NB60HD is an Insulated Gate Bipolar Transistor featuring a robust and non-punch through (NPT) Trench construction, providing superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT STGP12NB60HD is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
STGP12NB60HD Features
Low saturation voltage resulting in low conduction loss
Low switching loss in higher frequency applications
Soft fast reverse recovery diode
Excellent current versus package size performance density
10μs Short-circuit capability
STGP12NB60HD Applications
Motor Drive & Control
Power Management
Consumer Electronics
High-frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
UPS
