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IKW50N65F5AXKSA1

IKW50N65F5AXKSA1

IKW50N65F5AXKSA1

Infineon Technologies

IKW50N65F5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW50N65F5AXKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2013
Series Automotive, AEC-Q101, TrenchStop™
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation270W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 270W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 77 ns
Collector Emitter Breakdown Voltage650V
Turn On Time35 ns
Test Condition 400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 196 ns
IGBT Type Trench
Gate Charge108nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 21ns/156ns
Switching Energy 490μJ (on), 140μJ (off)
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3855 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$5.99575$1438.98

IKW50N65F5AXKSA1 Product Details

IKW50N65F5AXKSA1 Description


The IKW50N65F5AXKSA1 is a High speed 5 FAST IGBT in TRENCHSTOP? 5 technology copacked with RAPID 1 fast and soft antiparallel diode. In terms of efficiency for hard switching applications, the TRENCHSTOP? 5 IGBT technology offers unrivaled performance, redefining best-in-class IGBT. To meet the market's high efficiency requirements of the future, the new family represents a significant innovation in IGBT technology. Best-in-class efficiency allows for reduced junction and case temperatures, which raises device reliability.



IKW50N65F5AXKSA1 Features


  • Maximum junction temperature 175°C

  • Qualified according to AEC-Q101

  • Green package (RoHS compliant)

  • Best-in-Class efficiency in hard switching and resonant topologies

  • 650V breakdown voltage

  • Low gate charge QG

  • IGBT copacked with RAPID 1 fast and soft antiparallel diode



IKW50N65F5AXKSA1 Applications


  • Battery charger

  • DC/DC converter

  • Alternative Energy

  • Power Management


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