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STGWS38IH130D

STGWS38IH130D

STGWS38IH130D

STMicroelectronics

STGWS38IH130D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWS38IH130D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation180W
Base Part Number STGW38
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 180W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.3kV
Max Collector Current 55A
Collector Emitter Breakdown Voltage1.3kV
Voltage - Collector Emitter Breakdown (Max) 1300V
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 740 ns
Gate Charge127nC
Current - Collector Pulsed (Icm) 125A
Td (on/off) @ 25°C -/284ns
Switching Energy 3.4mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3250 items

Pricing & Ordering

QuantityUnit PriceExt. Price
600$2.74523$1647.138

STGWS38IH130D Product Details

STGWS38IH130D Description


The STGWS38IH130D is a very fast IGBT development using advanced PowerMESH? technology.



STGWS38IH130D Features


  • Low saturation voltage

  • High current capability

  • Low switching loss

  • Low static and peak forward voltage drop freewheeling diode



STGWS38IH130D Applications


  • Induction cooking, microwave ovens

  • Soft-switching applications


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