Name: IRG4RC10UPBF
Brand: Infineon Technologies
SKU: IRG4RC10UPBF
Availability: InStock

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IRG4RC10UPBF

Manufacturer part number:IRG4RC10UPBF

Manufacturer:Infineon Technologies

Description:IRG4RC10UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4RC10UPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Max Power Dissipation	38W
Current Rating	8.5A
Base Part Number	IRG4RC10UPBF
Element Configuration	Single
Power Dissipation	38W
Input Type	Standard
Power - Max	38W
Rise Time	11ns
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	8.5A
Collector Emitter Breakdown Voltage	600V
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	8.5A
Collector Emitter Saturation Voltage	2.6V
Test Condition	480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 5A
Gate Charge	15nC
Current - Collector Pulsed (Icm)	34A
Td (on/off) @ 25°C	19ns/116ns
Switching Energy	80μJ (on), 160μJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IRG4RC10UPBF Product Details

IRG4RC10UPBF Description

IRG4RC10UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and＞200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.