SGH80N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH80N60UFTU Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
195W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
80A
Test Condition
300V, 40A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 40A
Gate Charge
175nC
Current - Collector Pulsed (Icm)
220A
Td (on/off) @ 25°C
23ns/90ns
Switching Energy
570μJ (on), 590μJ (off)
In-Stock:2217 items
SGH80N60UFTU Product Details
SGH80N60UFTU Description
On Semiconductor SGH80N60UFTU Insulated Gate Bipolar Transistors (IGBTs) have minimal conduction and switching losses. The UF series is intended for applications requiring high-speed switchings, such as motor control and general inverters.
SGH80N60UFTU Features
High-speed switching
High input impedance
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
SGH80N60UFTU Applications
Robotics
Servo controls
AC & DC motor controls
General-purpose inverters
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