STGFW40H65FB Description
These IGBTs were created employing cutting-edge, exclusive trench gate field-stop construction. These components are a part of the new HB series of IGBTs, which offer the best conduction and switching loss trade-offs for increasing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGFW40H65FB Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
Safe paralleling
Tight parameter distribution
Low thermal resistance
STGFW40H65FB Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
