NGTG25N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTG25N120FL2WG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
385W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
385W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
50A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
178 ns
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 25A
Turn Off Time-Nom (toff)
430 ns
IGBT Type
Trench Field Stop
Gate Charge
178nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
87ns/179ns
Switching Energy
1.95mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3220 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$18.771665
$18.771665
10
$17.709118
$177.09118
100
$16.706714
$1670.6714
500
$15.761052
$7880.526
1000
$14.868916
$14868.916
NGTG25N120FL2WG Product Details
NGTG25N120FL2WG Description
This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. The IGBT is a good choice for solar and UPS applications.
NGTG25N120FL2WG Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 s Short Circuit Capability
These are Pb?Free Devices
NGTG25N120FL2WG Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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