STGP19NC60H datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP19NC60H Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
130W
Base Part Number
STGP19
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
32 ns
Test Condition
390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 12A
Turn Off Time-Nom (toff)
272 ns
Gate Charge
53nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
25ns/97ns
Switching Energy
85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
In-Stock:1209 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.306160
$9.30616
10
$8.779396
$87.79396
100
$8.282449
$828.2449
500
$7.813631
$3906.8155
1000
$7.371350
$7371.35
STGP19NC60H Product Details
STGP19NC60H Description
With the help of the cutting-edge power MESH technology, the STGP19NC60H IGBT achieves a fantastic balance between switching performance and low on-state behavior.
STGP19NC60H Features
Low on-voltage drop(VCE(sat))
High input impedance(voltage driven)
STGP19NC60H Applications
High-frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
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