HGT1S7N60C3DS Description
The MOS gated high voltage switching devices HGTP7N60C3D, HGT1S7N60C3DS, and HGT1S7N60C3D combine the greatest qualities of MOSFETs with bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly. The IGBT in question is a TA49115 developmental type. The diode, of developing type TA49057, is employed in anti-parallel with the IGBT. The IGBT is perfect for a variety of high voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as power supplies, drivers for solenoids, relays, and contactors, as well as AC and DC motor controllers.
HGT1S7N60C3DS Features
Short Circuit Rating
Low Conduction Loss
14A, 600V at TC = 25°C
Hyperfast Anti-Parallel Diode
600V Switching SOA Capability
Typical Fall Time...................140ns at TJ = 150°C
HGT1S7N60C3DS Applications
Industrial
Personal electronics
Communications equipment
