STGD3NB60SDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGD3NB60SDT4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
48W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGD3
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
48W
Input Type
Standard
Turn On Delay Time
125 μs
Transistor Application
POWER CONTROL
Rise Time
150μs
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
1 μs
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
6A
Reverse Recovery Time
1.7μs
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
600V
Turn On Time
275 ns
Test Condition
480V, 3A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 3A
Turn Off Time-Nom (toff)
4800 ns
Gate Charge
18nC
Current - Collector Pulsed (Icm)
25A
Td (on/off) @ 25°C
125μs/-
Switching Energy
1.15mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
4.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:7565 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.474549
$2.474549
10
$2.334480
$23.3448
100
$2.202340
$220.234
500
$2.077679
$1038.8395
1000
$1.960074
$1960.074
STGD3NB60SDT4 Product Details
STGD3NB60SDT4 Description
With this STMicroelectronics STGD3NB60SDT4 IGBT transistor, your circuit won't experience any lagging. The collector-emitter voltage is up to 600 V. It can dissipate up to 48000 mW of power. The operating temperature range for STGD3NB60SDT4 IGBT transistor is -65 °C to 175 °C. It is created in just one design.
STGD3NB60SDT4 Features
High current capability
Integrated wheeling diode
Off losses include tail current
Very low on-voltage drop(Vcesat)
High input impedance(voltage driven)
STGD3NB60SDT4 Applications
Static relays
Motor control
Gas discharge lamp
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