STGB30H60DFB Description
The STGB30H60DFB device is IGBT developed using an advanced proprietary trench gate field-stop structure. The STGB30H60DFB device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGB30H60DFB Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGB30H60DFB Applications
