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IXYX100N65B3D1

IXYX100N65B3D1

IXYX100N65B3D1

IXYS

IGBT 650V 188A 1150W PLUS247

SOT-23

IXYX100N65B3D1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2014
Series GenX3™, XPT™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation830W
Input Type Standard
Power - Max 830W
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 225A
Reverse Recovery Time 156 ns
Collector Emitter Breakdown Voltage650V
Test Condition 400V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 70A
IGBT Type PT
Gate Charge168nC
Current - Collector Pulsed (Icm) 460A
Td (on/off) @ 25°C 29ns/150ns
Switching Energy 1.27mJ (on), 1.37mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:423 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$14.60767$438.2301

About IXYX100N65B3D1

The IXYX100N65B3D1 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 650V 188A 1150W PLUS247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXYX100N65B3D1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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