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SGS13N60UFDTU

SGS13N60UFDTU

SGS13N60UFDTU

ON Semiconductor

SGS13N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGS13N60UFDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 600V
Max Power Dissipation45W
Current Rating6.5A
Base Part Number SG*13N60
Element ConfigurationSingle
Power Dissipation45W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 13A
Reverse Recovery Time 55ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Test Condition 300V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Gate Charge25nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 20ns/70ns
Switching Energy 85μJ (on), 95μJ (off)
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:13773 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.692477$0.692477
10$0.653280$6.5328
100$0.616302$61.6302
500$0.581417$290.7085
1000$0.548506$548.506

SGS13N60UFDTU Product Details

SGS13N60UFDTU Descriptions


The SGS13N60UFDTU is an Ultra-Fast IGBT from Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) that provide low conduction and switching losses.



SGS13N60UFDTU Features


  • High-speed switching

  • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A

  • High input impedance

  • CO-PAK, IGBT with FRD : trr = 37ns (typ.)



SGS13N60UFDTU Applications


  • AC & DC Motor control, general purpose inverters, robotics, servo controls


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