STGD10HF60KD Description
The device STGD10HF60KDuses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies.
STGD10HF60KDFeatures
? Designed for automotive applications and AEC-Q101 qualified
? Low on-voltage drop (VCE(sat))
? Low Cres / Cies ratio (no cross conduction susceptibility)
? Switching losses include diode recovery energy
? Short-circuit rated
? Very soft Ultrafast recovery anti-parallel diode
STGD10HF60KDApplications
? High frequency inverters
? SMPS and PFC in both hard switch and resonant topologies
? Motor drives
? Injection systems
