FGH40T65UQDF-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH40T65UQDF-F155 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.39g
Operating Temperature
-55°C~175°C TJ
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Power - Max
231W
Reverse Recovery Time
89ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.67V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
306nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
32ns/271ns
Switching Energy
989μJ (on), 310μJ (off)
RoHS Status
RoHS Compliant
In-Stock:1870 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.14000
$4.14
10
$3.72200
$37.22
450
$2.89296
$1301.832
900
$2.59584
$2336.256
FGH40T65UQDF-F155 Product Details
FGH40T65UQDF-F155 Description
The new line of field stop 4th generation IGBTs from ON Semiconductor use revolutionary field stop IGBT technology to provide enhanced conduction and switching performance as well as simple parallel operation. This device is ideal for applications requiring resonant or gentle switching, such MWO and induction heating.
FGH40T65UQDF-F155 Features
Max Junction Temperature 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A
100% of the Parts Tested for ILM
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb?Free and is RoHS Compliant
FGH40T65UQDF-F155 Applications
Induction Heating
MWO
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