FGD3N60LSDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGD3N60LSDTM Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
40W
Terminal Form
GULL WING
Current Rating
6A
Base Part Number
FGD3N60
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
6A
Reverse Recovery Time
234 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
85 ns
Test Condition
480V, 3A, 470 Ω, 10V
Vce(on) (Max) @ Vge, Ic
1.5V @ 10V, 3A
Turn Off Time-Nom (toff)
1420 ns
Gate Charge
12.5nC
Current - Collector Pulsed (Icm)
25A
Td (on/off) @ 25°C
40ns/600ns
Switching Energy
250μJ (on), 1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
2.3mm
Length
6.6mm
Width
6.1mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4975 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FGD3N60LSDTM Product Details
FGD3N60LSDTM Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
FGD3N60LSDTM Features
High Current Capability
Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
High Input Impedance
ROHS3 Compliant
Lead Free
No Radiation Hardening
FGD3N60LSDTM Applications
HID Lamp Applications
Piezo Fuel Injection Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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