STGB30M65DF2 Description
The STGB30M65DF2 is an IGBT that was created using a proprietary trench gate field-stop topology. The STGB30M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.
STGB30M65DF2 Features
Short-circuit withstand time of 6 seconds
@ IC = 30 A, VCE(sat) = 1.55 V (typ.)
a tight distribution of parameters
Paralleling is safer, and the thermal resistance is lower.
Antiparallel diode with a soft and quick recovery time
STGB30M65DF2 Applications
