IRG4IBC20KDPBF Description
IRG4IBC20KDPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available maximizing the power density of the system. IGBTs optimized for specific application conditions. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise EMI. The IRG4IBC20KDPBF is designed to exceed the power handling capability of equivalent industry-standard IGBTs.
IRG4IBC20KDPBF Features
High switching speed optimized for up to 25kHz with low VcE(on)
Short Circuit Rating 10μs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220 FULL PACK
Lead-Free
IRG4IBC20KDPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Home theater & entertainment
