Name: STGB6NC60HT4
Brand: STMicroelectronics
SKU: STGB6NC60HT4
Price: 1.80000 USD
Availability: InStock

new-10%

STGB6NC60HT4

Manufacturer part number:STGB6NC60HT4

Manufacturer:STMicroelectronics

Description:STGB6NC60HT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB6NC60HT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	56W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	15A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB6
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.7V
Max Breakdown Voltage	600V
Turn On Time	17.3 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Turn Off Time-Nom (toff)	222 ns
Gate Charge	13.6nC
Current - Collector Pulsed (Icm)	21A
Td (on/off) @ 25°C	12ns/76ns
Switching Energy	20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGB6NC60HT4 Product Details

STGB6NC60HT4 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances(reduced tfall) mantaining a low voltage drop.