IKQ75N120CH3XKSA1 Description
IKQ75N120CH3XKSA1is A Low switching losses IGBT in Highspeed3 technologycopacked with soft,fast recovery full current rated anti-parallel. Emitter Controlled diode.
IKQ75N120CH3XKSA1 Applications
·Industrial UPS Charger
·Energy Storage
·Three-level Solar String nverter·Welding
IKQ75N120CH3XKSA1 Features
High speed H3 technology offers:
*High efficiency in hard switching and resonant topologies·10usec short circuit withstand time atT=175°C
·Easy paralleling capability due to positive temperature coefficient in Vcesat
·Low EMI
·Low Gate Charge QG
·Very soft, fast recovery full current anti-parallel diode·MaximumjunctiontemperatureTmax=175°℃·Pb-free lead plating:RoHS complian