IRG4PC40KPBF Description
IRG4PC40KPBF is a 600V insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4PC40KPBF is in the TO- 247AC package with 160W power dissipation.
IRG4PC40KPBF Features
Short Circuit Rated UItraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency than Generation 3
Industry-standard TO- 247AC package
Reverse Voltage Avalanche Energy: 15mJ
Lead-Free
IRG4PC40KPBF Applications
Automotive
Hybrid, electric & powertrain systems
Industrial
Power delivery
Enterprise systems
Enterprise projectors
