FGPF7N60RUFDTU Description
The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.
FGPF7N60RUFDTU Features
High-speed switching
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
FGPF7N60RUFDTU Applications
