Name: IRG4BC10KDPBF
Brand: Infineon Technologies
SKU: IRG4BC10KDPBF
Price: 0.85000 USD
Availability: InStock

new-10%

IRG4BC10KDPBF

Manufacturer part number:IRG4BC10KDPBF

Manufacturer:Infineon Technologies

Description:IRG4BC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC10KDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Current Rating	9A
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	MOTOR CONTROL
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	100 ns
Collector Emitter Voltage (VCEO)	2.62V
Max Collector Current	9A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.39V
Turn On Time	78 ns
Test Condition	480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.62V @ 15V, 5A
Turn Off Time-Nom (toff)	410 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	49ns/97ns
Switching Energy	250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	210ns
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free

IRG4BC10KDPBF Product Details

IRG4BC10KDPBF Description

IRG4BC10KDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for motor control. As a Generation 4 IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.