STGB20M65DF2 Description
STGB20M65DF2 is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. Safer paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGB20M65DF2 Features
Advanced proprietary trench gate and field stop structure
Low conduction and switching losses
Positive VCE(sat) temperature coefficient
Very tight parameter distribution
Package: D2PAK
STGB20M65DF2 Applications
Motor control
UPS
PFC
General-purpose inverters
