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STGB12NB60KDT4

STGB12NB60KDT4

STGB12NB60KDT4

STMicroelectronics

STGB12NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB12NB60KDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation125W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating18A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB12
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation125W
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time14.5ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
Reverse Recovery Time 80 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.2V
Max Breakdown Voltage 600V
Turn On Time39.5 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 12A
Turn Off Time-Nom (toff) 461 ns
Gate Charge54nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/96ns
Switching Energy 258μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4406 items

Pricing & Ordering

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STGB12NB60KDT4 Product Details

STGB12NB60KDT4 Description


STGB12NB60KDT4 is a 600V N-channel Short circuit proof PowerMESH? IGBT. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH? IGBTs, with outstanding performances. The “K” identifies a family optimized for high-frequency motor control applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.



STGB12NB60KDT4 Features


High input impedance

Low on losses

Low on gate charge

High-frequency operation

A typical short circuit withstands a time of 10 micros

Co-packaged antiparallel diode



STGB12NB60KDT4 Applications


High-frequency motor controls

SMPS

UPS

Datacom module

Enterprise systems


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