IRG4BC20FDPBF Description
IRG4BC20FDPBF is a 600v N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The IRG4BC20FDPBF is applied to many fields, like Industrial Pro audio, video & signage Enterprise systems Enterprise machines Personal electronics, and Tablets. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC20FDPBF is in the TO-220AB package with 60W power dissipation.
IRG4BC20FDPBF Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
Lead-Free
IRG4BC20FDPBF Applications
Industrial
Pro audio, video & signage
Enterprise systems
Enterprise machine
Personal electronics
Tablets
