NGTB20N120IHSWG Description
The NGTB20N120IHSWG insulated gate bipolar transistor offers low on-state voltage and minimal switching loss, as well as a durable and affordable field stop trench structure, which contributes to its high performance in demanding switching applications. For resonance or soft switching applications, the IGBT is well suited. A robust co-packaged free-wheeling diode with a low forward voltage is incorporated into the gadget.
NGTB20N120IHSWG Features
Low gate charge
These are Pb-free devices
Low switching loss reduces system power dissipation
Optimized for low case temperature in IH cooker application
Low saturation voltage using trench with field stop technology
NGTB20N120IHSWG Applications
Soft switching
Inductive heating
Consumer appliances
