IRG7PH28UD1PBF Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IRG7PH28UD1PBF Features
· Low VCE (ON) trench IGBT technology
· Low switching losses
· Square RBSOA
· Ultra-low VF diode
· 1300Vpk repetitive transient capacity
· 100% of the parts tested for ILM?
· Positive VCE (ON) temperature co-efficient
· Tight parameter distribution
· Lead-free package
IRG7PH28UD1PBF Applications
■ High frequency motor controls, inverters, UPS
■ HF, SMPS and PFC in both hard switch and
resonant topologies
